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2n7001 pdf

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2n7001 pdf

2n7001 pdf

? Low Input Capacitance: 2n7001 pdf pF ? Fast Switching Speed: 7. DESCRIPTION The UTC 2N7002T uses advanced technology to provide excellent RDS ONlow gate charge and operation with low gate voltages. Features TrenchMOS? technology Very fast switching 2n7001 pdf level compatible Subminiature surface mount package. B C 2n7001 pdf ·High density cell design for low RDS ON. ? Low Threshold: 2 V typ. Pdr Rights Reserved© 2003 - 2016 Mirror Sites English :Chinese : German : Japanese : Russian :.

2n7001 pdf


2n7001 pdf


2n7001 pdf


2n7001 pdf

Description N-channel enhancement mode field-effect transistor in a plastic 2n7001 pdf using TrenchMOS?1 technology. High power and current handling capability? This device is suitable for use as a load switch or in PWM applications. Low on-resistance E L? ESD rating: 1000V HBM?


2n7001 pdf


2n7001 pdf

2n7001 pdf Part Number BVDSS RDS on ID 2N7002 60V 5. Easily designed drive circuits B? It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up 2n7001 pdf 2A. ? Low Threshold: 2 V typ. N DIM MILLIMETERS High saturation current capablity.

2n7001 pdf



2n7001 pdf


Drain Absolute Maximum Ratings Symbol Characteristic Value Units 2n7001 pdf Drain-to-Source Voltage V 60 Contin 5. Product availability: 2N7000 in SOT54 2n7001 pdf variant. RDS ONVGS 4. B C FEATURES ·High density cell design for low RDS ON. This device is suitable 2j7001 use as a load switch or in PWM applications. High power and current handling capability? Terminals: Solderable per MIL-STD-202, Method 208?

2n7001 pdf

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2n7001 pdf

2n7001 pdf




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